Please use this identifier to cite or link to this item:
http://archives.univ-biskra.dz/handle/123456789/26208| Title: | Modélisation Quantique d’un Transistor à Effet de Champ Hétéro-Jonction à Base SiGe par la Méthode des Volumes Finis |
| Authors: | LAZNEK, Samira |
| Issue Date: | 2007 |
| URI: | http://archives.univ-biskra.dz/handle/123456789/26208 |
| Appears in Collections: | Sciences de la Matière |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| LAZNEK_Samira1.pdf | 30,88 kB | Adobe PDF | View/Open |
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