Please use this identifier to cite or link to this item:
http://archives.univ-biskra.dz/handle/123456789/26208Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | LAZNEK, Samira | - |
| dc.date.accessioned | 2023-05-21T12:59:15Z | - |
| dc.date.available | 2023-05-21T12:59:15Z | - |
| dc.date.issued | 2007 | - |
| dc.identifier.uri | http://archives.univ-biskra.dz/handle/123456789/26208 | - |
| dc.language.iso | fr | en_US |
| dc.title | Modélisation Quantique d’un Transistor à Effet de Champ Hétéro-Jonction à Base SiGe par la Méthode des Volumes Finis | en_US |
| dc.type | Thesis | en_US |
| Appears in Collections: | Sciences de la Matière | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| LAZNEK_Samira1.pdf | 30,88 kB | Adobe PDF | View/Open |
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