Contribution à l’étude statistique des populations pour l’amélioration du gain des lasers à puits quantique à base de nitrures dilués.

Abstract

The present thesis investigates a quantum well laser GaSb1-xNx/GaSb emitting in the infrared spectral region. The active region is made of GaSb1-xNxand the cladding layers consist of GaSb. Several physical properties (electronic, optical and elastic) of GaSb1-xNx were calculated and used as input date for the simulation of our quantum well laser. The optical gain was thereafter addressed as a function of wavelength, the width of the active region and the concentration of charge carriers. The optical spectrum of the gain is calculated using the k.p method considering the parabolic model of conduction band and the subbands coupling between heavy holes and light holes in the conduction band. The effect of the strain was taken into consideration.